开关电源,绝缘栅,n-fet硅,sw-reg开关电源,sw-reg电源,FQP6N80C 6

6N80_副本



General Description

These N-Channel enhancement mode power field 

effecttransistors are produced using Fairchild’s proprietary,planar stripe,

 DMOS technology.

This advanced technology has been especially tailored tominimize on-state resistance, 

provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. 

These devices are wellsuited for high efficiency switch mode power supplies.

Features
5.5A, 800V, RDS(on) = 2.5 @VGS = 10 V

Low gate charge ( typical  21 nC)

Low Crss ( typical  8 pF)

Fast switching
ㄠ  ─ avalanche tested

Improved dv/dt capability

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